Opsens
OPP-M Fiber optic miniature physiological* pressure sensor
MEMS-based fiber optic pressure sensor for life science applications
Products Solutions

Compatible with Opsens’ WLPI serie LifeSens and OEM-MNP signal conditioners

Key Features

  • Ultra miniature
  • High fidelity
  • Easy catheter integration
  • Custom sensor packaging
  • EMI/RFI immunity
  • MRI safe and compatible
  • Low cost

Applications

  • Physiological pressure monitoring:
  • Intra vascular blood pressure
  • Urodynamic
  • Intra cranial pressure
  • Intra uterine pressure
  • Intra ocular
  • Intra aortic balloon pumping
  • Catheter research, new product development design
  • Guidewires design (0.2 mm OD model)
  • Cardiac assist applications
  • Pressure measurement under electro-surgery, MRI and MW/RF related practices

Description

Opsens’ OPP-M is a MEMS-based fiber optic pressure sensor designed for human and animal physiological pressure measurements.

These miniature 0.25 mm OD and 0.40 mm OD sensors are intended for use in catheters, guide-wires or other devices enabling minimally invasive physiology pressure measurement. Its novel patent pending design eliminates moisture-induced drift and minimizes thermal zero shift.

The bare optical pressure sensors are dedicated for company that wishes to performs own in-house sensor packaging unique to their product.

Opsens new encapsulated OPP-M-P is integration ready. The encapsulation can be done on the sensor tip and/or throughout the whole optical cable in different materials and sizes; customizable according to
client specific OEM applications. The packaged sensor significantly reduces the R&D investment and integration efforts hence minimizes the overall cost on implementation and manufacturing processes.

Combined with Opsens WLPI signal conditioning technology (patent # 7,259,862) and with the inherent advantages of fiber optic, the OPP-M addresses the medical industry requirements for long term accuracy, repeatability, low drift and high fidelity pressure measurements under the presence of harsh EM, RF, MR and microwave fields.

† Patent pending